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VW 2x45
Symbol
Conditions
Characteristic Values
10
I D , I R
T VJ = T VJM ; V R = V RRM ; V D = V DRM
<
5
mA
V
1: I GT , T VJ = 125°C
2: I GT , T VJ = 25°C
V T
I T
= 45 A; T VJ = 25 ° C
<
1.52
V
V G
3: I GT , T VJ = -40°C
V T0
r T
For power-loss calculations only
0.85
15
V
m Ω
V GT
I GT
V D = 6 V
V D = 6 V
T VJ = 25 ° C
T VJ = -40 ° C
T VJ = 25 ° C
T VJ = -40 ° C
<
<
<
<
1.5
1.6
100
200
V
V
mA
mA
1
1
2
3
4
5
6
V GD
I GD
T VJ = T VJM
V D = 2 / 3 V DRM
<
<
0.2
5
V
mA
4: P GAV = 0.5 W
I L
T VJ = 25 ° C; t P = 10 μs
I G = 0.45 A; di G /dt = 0.45 A/μs
<
450
mA
0.1
I GD , T VJ = 125°C
5: P GM = 5 W
6: P GM = 10 W
I H
T VJ = 25 ° C; V D = 6 V; R GK = ∞
<
200
mA
1
10
100
1000
I G
mA
t gd
T VJ = 25 ° C; V D = ?V DRM
<
2
μs
Fig. 1 Gate trigger characteristics
I G = 0.45 A; di G /dt = 0.45 A/μs
t q
R thJC
T VJ = T VJM ; I T = 20 A, t P = 200 μs; di/dt = -10 A/μs
V R = 100 V; dv/dt = 15 V/μs; V D = 2 / 3 V DRM
per thyristor; DC
typ.
150
1.25
μs
K/W
1000
μ s
T VJ = 25°C
R thJK
per module
per thyristor; DC
per module
0.31
1.55
0.39
K/W
K/W
K/W
t gd
100
typ.
Limit
d S
d A
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.7
9.4
50
mm
mm
m/s 2
10
1
Dimensions in mm (1 mm = 0.0394")
10 100 mA 1000
I G
Fig. 2 Gate trigger delay time
G
60
A
I F 50
200
A
175
I RMS
T VJ = 125°C
T K = 85°C
150
40
125
30
100
75
20
T VJ =125°C
T VJ = 25°C
50
10
25
0
0
VW2x45
0.0
0.5
1.0
1.5
V
2.0
0.01
0.1
1
s
10
V T
Fig. 3 Forward current vs.
voltage drop per leg
IXYS reserves the right to change limits, test conditions and dimensions
? 2008 IXYS All rights reserved
t
Fig. 4 Rated RMS current vs. time
(360° conduction)
20080828a
2-3
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